Home > Industrial Products > MIG75Q7CSB1X, Toshiba, Intelligent Power Module (IPM), Silicon N-Channel IGBT
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MIG75Q7CSB1X, Toshiba, Intelligent Power Module (IPM), Silicon N-Channel IGBT

MIG75Q7CSB1X, Toshiba, Intelligent Power Module (IPM), Silicon N-Channel IGBT

SKU: MIG75Q7CSB1X-TOSHIBA-INTELLIGENT-POWER-MODULE-IPM-SILICON-N-CHANNEL-IGBT

$81.00
$81.00
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Product Information

Item Details
Product Model MIG50Q7CSB1X
Manufacturer TOSHIBA
Type Intelligent Power Module (IPM), Silicon N-Channel IGBT
Package Type 7-in-1 Integrated Package
Weight 278 g (Typical)
Package Dimensions TOSHIBA 2-108G1A, Unit: mm

Key Specifications

Category Parameter Value Unit
Maximum Ratings Collector-Emitter Voltage (VCE) 1200 V
Collector Current (IC) 50 A
Operating Junction Temperature (TJ) -40 to +150 °C
Storage Temperature (Tstg) -40 to +125 °C
Electrical Characteristics Collector-Emitter Saturation Voltage (VCE(sat)) 2.2 (Typical) V
Gate-Emitter Voltage (VGE) ±20 V
Short-Circuit Protection Integrated -

Functional Capabilities

  • Integrated Inverter, Brake Power Circuits, and Control Circuits
  • IGBT Drive Units with Protection for Short-Circuit Current, Over Current, Under Voltage, and Over Temperature
  • Isolated Electrodes from the Case

Technical Features

  • Low Saturation Voltage (VCE(sat) = 2.2 V Typ.)
  • High Power Switching Efficiency
  • Multiple Protection Mechanisms for Enhanced Reliability
  • Compact 7-in-1 Package Design

Application Areas

  • High Power Switching Applications
  • Motor Control Systems
  • Industrial Drives
  • Power Inverters

Disclaimer

This product brief is generated by AI based on the provided documentation. For precise technical details, please refer to the official TOSHIBA datasheet. The information presented here is for general reference only and may not cover all specifications or updates.

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