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FS150R12KT4, Infineon, IGBT Module with Trench/Fieldstop IGBT4 and EmCon4 Diode

FS150R12KT4, Infineon, IGBT Module with Trench/Fieldstop IGBT4 and EmCon4 Diode

SKU: FS150R12KT4-INFINEON-IGBT-MODULE-WITH-TRENCH-FIELDSTOP-IGBT4-AND-EMCON4-DIODE

Regular price $85.00
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Product Information

Item Details
Product Model FS150R12KT4
Manufacturer Infineon
Type IGBT Module with Trench/Fieldstop IGBT4 and EmCon4 Diode
Package Type EconoPACK™3
Weight 300 g

Key Specifications

Category Parameter Value Unit
Maximum Ratings Collector-Emitter Voltage (VCES) 1200 V
Continuous Collector Current (IC) 150 (Tc = 90°C, Tj = 175°C) A
Pulse Collector Current (ICP) 300 (1 ms) A
Power Dissipation (PTOT) 750 (Tc = 25°C, Tj = 175°C) W
Gate-Emitter Voltage (VGES) ±20 V
Junction Temperature (Tj) -40 to +175 °C
Isolation Voltage (VISO) 2.5 kV (RMS, 50 Hz, 1 min) V
Electrical Characteristics Collector-Emitter Saturation Voltage (VCE(sat)) 1.75 - 2.20 (Typical range depending on Tj) V
Gate Threshold Voltage (VGE(th)) 5.2 - 6.4 V
Input Capacitance (Cies) 9.35 nF
Switching Time (ton) 0.115 - 0.135 (Typical range depending on Tj) µs
Thermal Resistance (Rth(j-c)) 0.20 (IGBT), 0.375 (Diode) K/W
Forward Voltage (VF) 1.65 - 2.15 (Typical range depending on Tj) V

Functional Capabilities

  • Integrated IGBT and EmCon4 diode in a single module
  • Can operate in both inverter and braking chopper applications

Technical Features

  • Low saturation voltage (VCE(sat) = 1.75 V Typ. at certain conditions) for reduced power losses
  • Trench/Fieldstop IGBT4 technology for high - speed switching
  • EmCon4 diode with soft - recovery characteristics to reduce switching stress
  • Low thermal resistance for efficient heat dissipation

Disclaimer

This product brief is generated by AI based on the provided documentation. For precise technical details, please refer to the official datasheet of the FS150R12KT4 IGBT module. The information presented here is for general reference only and may not cover all specifications or updates.

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