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APT85GR120JD60, Microchip, Ultra Fast NPT-IGBT® Module

APT85GR120JD60, Microchip, Ultra Fast NPT-IGBT® Module

SKU: APT85GR120JD60-MICROCHIP-ULTRA-FAST-NPT-IGBT®-MODULE

Regular price $33.00
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Product Information

Item Details
Product Model APT85GR120JD60
Manufacturer Microsemi
Type Ultra Fast NPT-IGBT® Module
Package Type ISOTOP® Combi (IGBT + Diode)
Weight 1.03 oz (Typical)
Package Dimensions 38.0-38.2 mm (Length) × 31.5-31.7 mm (Width) × 11.8-12.2 mm (Height)

Key Specifications

Category Parameter Value Unit
Maximum Ratings Collector-Emitter Voltage (VCES) 1200 V
Gate-Emitter Voltage (VGE) ±30 V
Continuous Collector Current (IC1) 118 (25°C)
85 (75°C)
A
Pulse Collector Current (ICM) 340 A
Short Circuit Withstand Time 10 μs
Power Dissipation (PD) 595 W
Junction Temperature (TJ) -55 to +150 °C
Isolation Voltage 2500 VAC
Electrical Characteristics Breakdown Voltage (V(BR)CES) 1200 V
Threshold Voltage (VGE(TH)) 3.5-6.5 V
On-State Voltage (VCE(ON)) 2.5 (Typical, 25°C)
3.3 (Typical, 125°C)
V
Input Capacitance (Cies) 8400 pF
Total Gate Charge (Qg) 490-660 nC
Switching Energy (Eon) 6000-11700 μJ

Functional Capabilities

  • Integrated IGBT and soft recovery diode
  • Short circuit protection
  • High-frequency switching capability
  • RoHS compliant

Technical Features

  • Low saturation voltage (VCE(ON) = 2.5 V Typ.)
  • Ultra-fast switching with low tail current
  • NPT (Non-Punch Through) technology
  • Optimized trade-off between conduction and switching losses

Application Areas

  • Induction heating systems
  • Motor control
  • General purpose inverters
  • Uninterruptible Power Supplies (UPS)

Disclaimer

This product brief is generated by AI based on the provided documentation. For precise technical details, please refer to the official Microsemi datasheet. The information presented here is for general reference only and may not cover all specifications or updates.

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