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APT85GR120JD60, Microchip, Ultra Fast NPT-IGBT® Module
APT85GR120JD60, Microchip, Ultra Fast NPT-IGBT® Module
SKU: APT85GR120JD60-MICROCHIP-ULTRA-FAST-NPT-IGBT®-MODULE
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$33.00
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Product Information
Item | Details |
---|---|
Product Model | APT85GR120JD60 |
Manufacturer | Microsemi |
Type | Ultra Fast NPT-IGBT® Module |
Package Type | ISOTOP® Combi (IGBT + Diode) |
Weight | 1.03 oz (Typical) |
Package Dimensions | 38.0-38.2 mm (Length) × 31.5-31.7 mm (Width) × 11.8-12.2 mm (Height) |
Key Specifications
Category | Parameter | Value | Unit |
---|---|---|---|
Maximum Ratings | Collector-Emitter Voltage (VCES) | 1200 | V |
Gate-Emitter Voltage (VGE) | ±30 | V | |
Continuous Collector Current (IC1) | 118 (25°C) 85 (75°C) |
A | |
Pulse Collector Current (ICM) | 340 | A | |
Short Circuit Withstand Time | 10 | μs | |
Power Dissipation (PD) | 595 | W | |
Junction Temperature (TJ) | -55 to +150 | °C | |
Isolation Voltage | 2500 | VAC | |
Electrical Characteristics | Breakdown Voltage (V(BR)CES) | 1200 | V |
Threshold Voltage (VGE(TH)) | 3.5-6.5 | V | |
On-State Voltage (VCE(ON)) | 2.5 (Typical, 25°C) 3.3 (Typical, 125°C) |
V | |
Input Capacitance (Cies) | 8400 | pF | |
Total Gate Charge (Qg) | 490-660 | nC | |
Switching Energy (Eon) | 6000-11700 | μJ |
Functional Capabilities
- Integrated IGBT and soft recovery diode
- Short circuit protection
- High-frequency switching capability
- RoHS compliant
Technical Features
- Low saturation voltage (VCE(ON) = 2.5 V Typ.)
- Ultra-fast switching with low tail current
- NPT (Non-Punch Through) technology
- Optimized trade-off between conduction and switching losses
Application Areas
- Induction heating systems
- Motor control
- General purpose inverters
- Uninterruptible Power Supplies (UPS)
Disclaimer
This product brief is generated by AI based on the provided documentation. For precise technical details, please refer to the official Microsemi datasheet. The information presented here is for general reference only and may not cover all specifications or updates.
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