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2MBI200VH-120-50, Fuji, IGBT Module (V series)
2MBI200VH-120-50, Fuji, IGBT Module (V series)
SKU: 2MBI200VH-120-50-FUJI-IGBT-MODULE-V-SERIES
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$54.00
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Product Information
Item | Details |
---|---|
Product Model | 2MBI200VH-120-50 |
Manufacturer | Fuji Electric |
Type | IGBT Module (V series) |
Package Type | 2-in-1 Isolated Package |
Weight | Not specified in documentation |
Package Dimensions | Not specified in documentation |
Key Specifications
Category | Parameter | Value | Unit |
---|---|---|---|
Maximum Ratings | Collector-Emitter Voltage (VCES) | 1200 | V |
Gate-Emitter Voltage (VGES) | ±20 | V | |
Continuous Collector Current (IC) | 200 (Tc=100°C) | A | |
Pulse Collector Current (ICP) | 400 (1ms, Tc=25°C) | A | |
Power Dissipation (PC) | 1110 | W | |
Junction Temperature (Tj) | -40 to +175 | °C | |
Isolation Voltage (Viso) | 2500 | VAC | |
Electrical Characteristics | Threshold Voltage (VGE(th)) | 6.0-7.0 | V |
Collector-Emitter Saturation Voltage (VCE(sat)) | 2.30 (Typical, Tj=25°C) | V | |
Input Capacitance (Cies) | 18 | nF | |
Switching Time (ton) | 0.60 (Typical, Tj=150°C) | μs | |
Reverse Recovery Time (trr) | 0.15 | μs | |
Thermal Resistance (Rth(j-c)) | 0.135 (IGBT) | °C/W | |
Forward Voltage (VF) | 1.70 (Typical, Tj=25°C) | V |
Functional Capabilities
- Integrated IGBT and freewheeling diode
- Built-in short-circuit and overcurrent protection
- Low inductance module structure
Technical Features
- High-speed switching capability
- Low saturation voltage (VCE(sat) = 2.30 V Typ.)
- Voltage-driven gate design
- Optimized thermal management
Application Areas
- Motor drive inverters
- AC/DC servo drives
- Uninterruptible Power Supplies (UPS)
- Industrial machinery (e.g., welding machines)
Disclaimer
This product brief is generated by AI based on the provided documentation. For precise technical details, please refer to the official Fuji Electric datasheet. The information presented here is for general reference only and may not cover all specifications or updates.
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