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2MBI200U4B-120-50, Fuji, IGBT module

2MBI200U4B-120-50, Fuji, IGBT module

SKU: 2MBI200U4B-120-50-FUJI-IGBT-MODULE

Regular price $62.00
Regular price Sale price $62.00
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Product Information

Item Details
Product Model 2MBI200U4D-120
Manufacturer Fuji Electric Device Technology Co., Ltd.
Type IGBT Module
Package Type Isolated Metal Base Module
Package Dimensions 108±1 mm (Overall Length) × 93+0.2 mm (Width) × 25+0.2 mm (Height)

Key Specifications

Category Parameter Value Unit
Maximum Ratings Collector-Emitter Voltage (VCES) 1200 V
Gate-Emitter Voltage (VGES) ±20 V
Continuous Collector Current (IC) 300 (Tc=25°C)
200 (Tc=80°C)
A
Pulse Collector Current (ICP) 600 (Tc=25°C)
400 (Tc=80°C)
A
Power Dissipation (PC) 1040 W
Junction Temperature (TJ) -40 to +150 °C
Isolation Voltage (VISO) 2500 VAC
Electrical Characteristics Zero Gate Voltage Leakage (ICES) ≤2.0 mA
Gate-Emitter Leakage (IGES) ≤400 nA
Threshold Voltage (VGE(th)) 6.5-8.5 V
Collector-Emitter Saturation Voltage (VCE(sat)) 1.90 (Typical, Tj=25°C)
2.10 (Typical, Tj=125°C)
V
Input Capacitance (Cies) 22 nF
Reverse Recovery Time (trr) ≤0.35 μs
Forward Voltage (VF) 1.65 (Typical, Tj=25°C)
1.75 (Typical, Tj=125°C)
V

Functional Capabilities

  • Integrated IGBT and freewheeling diode
  • Built-in overvoltage, overcurrent, and overtemperature protection
  • Isolated metal base for enhanced safety

Technical Features

  • Low saturation voltage for reduced power loss
  • High switching frequency capability
  • Low thermal resistance (Rth(j-c) = 0.12°C/W)
  • Rugged mechanical design with reinforced terminals

Disclaimer

This product brief is generated by AI based on the provided documentation. For precise technical details, please refer to the official Fuji Electric datasheet. The information presented here is for general reference only and may not cover all specifications or updates.

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