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2MBI200U4B-120-50, Fuji, IGBT module
2MBI200U4B-120-50, Fuji, IGBT module
SKU: 2MBI200U4B-120-50-FUJI-IGBT-MODULE
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$62.00
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Product Information
Item | Details |
---|---|
Product Model | 2MBI200U4D-120 |
Manufacturer | Fuji Electric Device Technology Co., Ltd. |
Type | IGBT Module |
Package Type | Isolated Metal Base Module |
Package Dimensions | 108±1 mm (Overall Length) × 93+0.2 mm (Width) × 25+0.2 mm (Height) |
Key Specifications
Category | Parameter | Value | Unit |
---|---|---|---|
Maximum Ratings | Collector-Emitter Voltage (VCES) | 1200 | V |
Gate-Emitter Voltage (VGES) | ±20 | V | |
Continuous Collector Current (IC) | 300 (Tc=25°C) 200 (Tc=80°C) |
A | |
Pulse Collector Current (ICP) | 600 (Tc=25°C) 400 (Tc=80°C) |
A | |
Power Dissipation (PC) | 1040 | W | |
Junction Temperature (TJ) | -40 to +150 | °C | |
Isolation Voltage (VISO) | 2500 | VAC | |
Electrical Characteristics | Zero Gate Voltage Leakage (ICES) | ≤2.0 | mA |
Gate-Emitter Leakage (IGES) | ≤400 | nA | |
Threshold Voltage (VGE(th)) | 6.5-8.5 | V | |
Collector-Emitter Saturation Voltage (VCE(sat)) | 1.90 (Typical, Tj=25°C) 2.10 (Typical, Tj=125°C) |
V | |
Input Capacitance (Cies) | 22 | nF | |
Reverse Recovery Time (trr) | ≤0.35 | μs | |
Forward Voltage (VF) | 1.65 (Typical, Tj=25°C) 1.75 (Typical, Tj=125°C) |
V |
Functional Capabilities
- Integrated IGBT and freewheeling diode
- Built-in overvoltage, overcurrent, and overtemperature protection
- Isolated metal base for enhanced safety
Technical Features
- Low saturation voltage for reduced power loss
- High switching frequency capability
- Low thermal resistance (Rth(j-c) = 0.12°C/W)
- Rugged mechanical design with reinforced terminals
Disclaimer
This product brief is generated by AI based on the provided documentation. For precise technical details, please refer to the official Fuji Electric datasheet. The information presented here is for general reference only and may not cover all specifications or updates.
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